From the FALP® chamber that runs ALE and PEALD in one vacuum, to the ceramic rings, chucks and wear parts that keep it uniform.
The first integrated high-speed ALE/PEALD chamber: two independent gas inlets, symmetric flow and a central turbomolecular pump for rapid gas exchange.
AI-generated visualisation of our laboratory. Actual equipment layout may differ.
Single-chamber ALE + PEALD platform for 300mm wafers, built for process development and pilot production.
Single-chamber ALE + PEALD platform for 200mm wafers, built for process development and pilot production.
Large Substrate Chamber with a 500mm gas ring, tested for thick films depositions on optical substrates as well
Four-chamber configuration that multiplies single-chamber throughput for volume production.
Segmented 99.9% alumina ring with two non-intersecting channels and integrated Laval-type nozzles. 380 mm and 500 mm versions.
Our own ESC for 300 mm wafers, enabling tight wafer-temperature control during plasma processing.
Zirconia and alumina lift pins plus cover rings, made to drawing for plasma and vacuum tools.
Qualified recipes for Al₂O₃, SiO₂, TiO₂ and TiN films, with metrology reports and process-window documentation.
Silicon ALE and isotropic critical-dimension trimming recipes, including the double-patterning sequence.
Dual channels and a 3,600 L/s turbomolecular pump keep every half-cycle cleanly separated.
Every ring is flow-mapped per nozzle and per channel before it ships.
Turbo-Pump has run 4 years with different PEALD and ALE processes without any damage to it
Demo runs on 150mm, 200mm, 300mm and 430mm substrates in our ISO Class 5 clean room.
Tell us your substrate size, film stack and throughput target, and we will recommend a configuration or schedule a demo run.
Specifications are indicative. Final configuration is confirmed in your quotation.